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| TS750-TS758 6A Silicon Rectifiers Voltage range 50-800 Volts FEATURES Plastic material used carries Underwriters Laboratory Classification 94V-0 High forward current capability Diffused junction High surge current capability High temperature soldering guaranteed: 260C/10 seconds, 0.375"(9.5mm) lead length, 5lbs.(2.3kg) tension P600 MECHANICAL DATA Cases: Molded plastic body Lead: Plated axial leads, matte-tin plating Polarity: Color band denotes cathode end Mounting position: Any Weight: 0.07 ounce, 2.1 grams Dimensions in inches and (millimeters) Pb-free lead finish (second-level interconnect). MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25C ambient temperature unless otherwise specified. Single phase, half wave,60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Parameter Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Non-repetitive Peak Reverse Voltage Maximum Average Forward Rectified Current at TA = 60C, P.C.B. Mounting (Fig. 1) TL= 60C, 0.125"(3.18mm) Lead Length (Fig. 2) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 6.0A @ 100A Maximum DC Reverse Current @ TA=25C at Rated DC Blocking Voltage @ TA=100C Typical Junction Capacitance ( Note 1 ) Typical Thermal Resistance (Note 2) Symbol TS750 TS751 TS752 TS754 TS756 TS758 Units V V V V A VRRM VRMS VDC VBR I(AV) IFSM VF IR Cj 50 35 50 60 100 70 100 120 200 140 200 240 6.0 22.0 400 0.95 400 280 400 480 600 420 600 720 800 560 800 1200 A V RJA RJL Operating Junction Temperature Range TJ Storage Temperature Range TSTG Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts 2. Mount on copper pad, size 16mm x 16mm on P.C.B. 1.25 5.0 1000 150 20.0 4.0 -50 to +150 -50 to +150 1.30 uA uA pF C/W C C 8/26/2004 Rev.1.01 www.SiliconStandard.com 1 of 2 TS750-TS758 RATINGS AND CHARACTERISTIC CURVES AVERAGE FORWARD RECTIFIED CURRENT. (A) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT. (A) 60 Hz RESISTIVE OR INDUCTIVE LOAD 28 24 20 16 FIG.2- MAXIMUM FORWARD CURRENT DERATING CURVE L=0.25" (6.35mm) L=0.125" (3.18mm) 60 Hz RESISTIVE OR INDUCTIVE LOAD GROUND PLANE 1.0 X 1.0" (25.4 X 25.4mm) COPPER SURFACE AREA L=0.375" (9.5mm) BOTH LEADS ATTACHED as HEAT SINKS WITH LENGTH as SHOWN, L 0.050"(1.27mm) min. ALTERNATE P.C.B. 12 8.0 4.0 0 L=0.625" (15.8mm) 1.1 x 1.0" (30 x 30Mmm) COPPER PADS 20 40 60 80 100 120 o 140 160 180 200 0 20 40 60 80 100 120 o 140 160 180 200 AMBIENT TEMPERATURE. ( C) LEAD TEMPERATURE. ( C) FIG.3- TYPICAL REVERSE CHARACTERISTICS 100 100 FIG.4- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT MICROAMPERES INSTANTANEOUS FORDWARD CURRENT AMPERES 10 Tj=125 0C 10 Tj=100 0C 1 1 Tj=25 0C 0.1 0.1 Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE 0 0.01 0 20 40 60 80 100 120 140 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.5- MAXIMUM PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES VRRM may be APPLIED BETWEEN EACH CYCLE of SURGE, the Tj NOTED is Tj PRIOR to SURGE FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE, OC/W 100 600 NON -RE PET ITIV E Tj=25 0C 10 Tj=1 50 0C 100 1 0 0.1 1.0 NUMBER OF CYCLES AT 60Hz 10 0.1 0.01 0.1 1 T, PULSE DURATION, sec. 10 100 Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 8/26/2004 Rev.1.01 www.SiliconStandard.com 2 of 2 |
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